NDD60N360U1T4G

Manufacturer
onsemi
Product Category
Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 11A DPAK
Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
11A (Tc)
Drain to Source Voltage (Vdss) :
600 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
790 pF @ 50 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) :
114W (Tc)
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
360mOhm @ 5.5A, 10V
Supplier Device Package :
DPAK
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±25V
Vgs(th) (Max) @ Id :
4V @ 250µA
Datasheet :
NDD60N360U1T4G

Manufacturer related products

Catalog related products

related products

Part Manufacturer Stock Description
NDD60N360U1-1G Rochester Electronics, LLC 37,650 MOSFET N-CH 600V 11A IPAK
NDD60N360U1-35G Rochester Electronics, LLC 32,775 MOSFET N-CH 600V 11A IPAK
NDD60N550U1-1G Rochester Electronics, LLC 20,475 MOSFET N-CH 600V 8.2A IPAK
NDD60N550U1-35G Rochester Electronics, LLC 20,625 MOSFET N-CH 600V 8.2A IPAK
NDD60N550U1T4G onsemi 37,195 MOSFET N-CH 600V 8.2A DPAK
NDD60N745U1-1G Rochester Electronics, LLC 26,625 NDD60N745 - POWER MOSFET 600V 6.
NDD60N745U1-1G onsemi 5,000 MOSFET N-CH 600V 6.6A IPAK
NDD60N745U1-35G Rochester Electronics, LLC 22,175 MOSFET N-CH 600V 6.6A IPAK
NDD60N745U1T4G onsemi 13,565 MOSFET N-CH 600V 6.6A DPAK
NDD60N900U1-1G Rochester Electronics, LLC 29,100 MOSFET N-CH 600V 5.7A IPAK
NDD60N900U1-35G Rochester Electronics, LLC 44,250 MOSFET N-CH 600V 5.7A IPAK
NDD60N900U1T4G onsemi 1,922 MOSFET N-CH 600V 5.7A DPAK