FCD3400N80Z

Manufacturer
Rochester Electronics, LLC
Product Category
Transistors - FETs, MOSFETs - Single
Description
POWER FIELD-EFFECT TRANSISTOR, N
Manufacturer :
Rochester Electronics, LLC
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
2A (Tc)
Drain to Source Voltage (Vdss) :
800 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
400 pF @ 100 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) :
32W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
3.4Ohm @ 1A, 10V
Supplier Device Package :
TO-252AA
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4.5V @ 200µA
Datasheet :
FCD3400N80Z

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