PHB110NQ06LT,118

Manufacturer :

NXP USA Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

75A (Tc)

Drain to Source Voltage (Vdss) :

55 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

45 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

3960 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power Dissipation (Max) :

200W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

7mOhm @ 25A, 10V

Supplier Device Package :

D²PAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±15V

Vgs(th) (Max) @ Id :

2V @ 1mA