TK160F10N1L,LXGQ

Manufacturer
Toshiba Semiconductor and Storage
Product Category
Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 160A TO220SM
Manufacturer :
Toshiba Semiconductor and Storage
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
160A (Ta)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
10100 pF @ 10 V
Mounting Type :
Surface Mount
Operating Temperature :
175°C
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) :
375W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
2.4mOhm @ 80A, 10V
Supplier Device Package :
TO-220SM(W)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
3.5V @ 1mA
Datasheets
TK160F10N1L,LXGQ

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