RJM0603JSC-00#13

Manufacturer :

Renesas Electronics America Inc

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

20A

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Logic Level Gate, 4.5V Drive

FET Type :

3 N and 3 P-Channel (3-Phase Bridge)

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

175°C

Package / Case :

20-SOIC (0.433", 11.00mm Width) Exposed Pad

Power - Max :

54W

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

20mOhm @ 10A, 10V

Supplier Device Package :

20-HSOP

Vgs(th) (Max) @ Id :

2.5V @ 1mA