MRF7P20040HSR3
- Manufacturer
- Rochester Electronics, LLC
- Product Category
- Transistors - FETs, MOSFETs - RF
- Description
- RF 2-ELEMENT, S BAND, N-CHANNEL
- Manufacturer :
- Rochester Electronics, LLC
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Current - Test :
- 150 mA
- Current Rating (Amps) :
- 10µA
- Frequency :
- 1.8GHz ~ 2.2GHz
- Gain :
- 18.2dB
- Noise Figure :
- -
- Package / Case :
- NI-780S-4
- Power - Output :
- 10W
- Product Status :
- Active
- Supplier Device Package :
- NI-780S-4
- Transistor Type :
- LDMOS (Dual)
- Voltage - Rated :
- 65 V
- Voltage - Test :
- 32 V
- Datasheet :
- MRF7P20040HSR3
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Catalog related products
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| MRF7P20040HR5 | NXP USA Inc. | 5,000 | FET RF 2CH 65V 2.03GHZ NI780H-4 |
| MRF7P20040HSR3 | NXP USA Inc. | 5,000 | FET RF 2CH 65V 2.03GHZ NI780HS-4 |
| MRF7P20040HSR5 | NXP USA Inc. | 5,000 | FET RF 2CH 65V 2.03GHZ NI780HS-4 |
| MRF7S15100HR3 | NXP USA Inc. | 5,000 | FET RF 65V 1.51GHZ NI780 |
| MRF7S15100HR5 | NXP USA Inc. | 5,000 | FET RF 65V 1.51GHZ NI780 |
| MRF7S15100HSR3 | NXP USA Inc. | 5,000 | FET RF 65V 1.51GHZ NI780S |
| MRF7S15100HSR3128 | Rochester Electronics, LLC | 74 | N CHANNEL ENHANCEMENT-MODE RF PO |
| MRF7S16150HR3 | NXP USA Inc. | 5,000 | FET RF 65V 1.66GHZ NI-780 |
| MRF7S16150HR5 | NXP USA Inc. | 5,000 | FET RF 65V 1.66GHZ NI-780 |
| MRF7S16150HSR3 | Rochester Electronics, LLC | 5,000 | RF POWER N-CHANNEL, MOSFET |
| MRF7S16150HSR3 | NXP USA Inc. | 5,000 | FET RF 65V 1.66GHZ NI-780S |
| MRF7S16150HSR5 | Rochester Electronics, LLC | 5,000 | FET RF 65V 1.66GHZ NI-780S |
| MRF7S16150HSR5 | NXP USA Inc. | 5,000 | FET RF 65V 1.66GHZ NI-780S |
| MRF7S18125AHR3 | NXP USA Inc. | 5,000 | FET RF 65V 1.88GHZ NI780 |
| MRF7S18125AHR5 | NXP USA Inc. | 5,000 | FET RF 65V 1.88GHZ NI780 |
