RN1101MFV,L3F

Manufacturer
Toshiba Semiconductor and Storage
Product Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
TRANS PREBIAS NPN 50V 0.1A VESM
Manufacturer :
Toshiba Semiconductor and Storage
Product Category :
Transistors - Bipolar (BJT) - Single, Pre-Biased
Current - Collector (Ic) (Max) :
100 mA
Current - Collector Cutoff (Max) :
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 10mA, 5V
Frequency - Transition :
-
Mounting Type :
Surface Mount
Package / Case :
SOT-723
Power - Max :
150 mW
Product Status :
Not For New Designs
Resistor - Base (R1) :
4.7 kOhms
Resistor - Emitter Base (R2) :
4.7 kOhms
Supplier Device Package :
VESM
Transistor Type :
NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max) :
50 V
Datasheet :
RN1101MFV,L3F

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