MHT 12 - 8 OHM

Manufacturer
Visaton GmbH & Co. KG
Product Category
Speakers
Description
HIGH-END TWEETER-RANGE MAGNETOST
Manufacturer :
Visaton GmbH & Co. KG
Product Category :
Speakers
Efficiency - dBA :
91.00
Efficiency - Testing :
1W/1M
Efficiency - Type :
Sound Pressure Level (SPL)
Frequency - Self Resonant :
-
Frequency Range :
2 kHz ~ 40 kHz
Height - Seated (Max) :
2.008" (51.00mm)
Impedance :
8 Ohms
Ingress Protection :
-
Material - Cone :
-
Material - Magnet :
Nd
Port Location :
Side
Power - Max :
150 W
Power - Rated :
100 W
Product Status :
Active
Ratings :
-
Shape :
Square
Size / Dimension :
4.409" L x 4.409" W (112.00mm x 112.00mm)
Technology :
-
Termination :
Quick Connect
Type :
Tweeter
Datasheet :
MHT 12 - 8 OHM

Manufacturer related products

Catalog related products

related products

Part Manufacturer Stock Description
MHT1000HR5 NXP USA Inc. 5,000 IC RF AMP 2.45GHZ NI-880H-2L
MHT1000HR5178 Rochester Electronics, LLC 49 N CHANNEL ENHANCEMENT-MODE RF PO
MHT1001HR5 NXP USA Inc. 5,000 IC TRANS RF LDMOS 2450MHZ
MHT1002GNR3 NXP USA Inc. 5,000 IC RF AMP 915MHZ OM-780G-4L
MHT1002NR3 NXP USA Inc. 5,000 IC RF AMP 915MHZ OM780-4
MHT1003NR3 NXP USA Inc. 5,000 IC TRANS RF LDMOS 2450MHZ
MHT1004GNR3 Rochester Electronics, LLC 46 RF POWER FIELD-EFFECT TRANSISTOR
MHT1004GNR3 NXP USA Inc. 5,000 RF MOSFET LDMOS 32V OM780-2 GULL
MHT1004NR3 NXP USA Inc. 5,000 RF POWER LDMOS TRANSISTOR 2450
MHT1005HSR3 NXP USA Inc. 1,750 IC LDMOS TRANS 120V NI-780S
MHT1006NT1 NXP USA Inc. 5,000 FET RF 65V 2.17GHZ PLD1.5W
MHT1008NT1 NXP USA Inc. 1,507 RF MOSFET LDMOS PLD1.5W
MHT1008NT1 Rochester Electronics, LLC 850 RF POWER FIELD-EFFECT TRANSISTOR
MHT1008NT1515 Rochester Electronics, LLC 5,000 RF POWER LDMOS TRANSISTOR FOR CO
MHT1108NT1 NXP USA Inc. 5,000 RF POWER LDMOS TRANSISTOR FOR CO