GT30N135SRA,S1E
- Manufacturer
- Toshiba Semiconductor and Storage
- Product Category
- Transistors - IGBTs - Single
- Description
- D-IGBT TO-247 VCES=1350V IC=30A
- Manufacturer :
- Toshiba Semiconductor and Storage
- Product Category :
- Transistors - IGBTs - Single
- Current - Collector (Ic) (Max) :
- 60 A
- Current - Collector Pulsed (Icm) :
- 120 A
- Gate Charge :
- 270 nC
- IGBT Type :
- -
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature :
- 175°C (TJ)
- Package / Case :
- TO-247-3
- Power - Max :
- 348 W
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Supplier Device Package :
- TO-247
- Switching Energy :
- -, 1.3mJ (off)
- Td (on/off) @ 25°C :
- -
- Test Condition :
- 300V, 60A, 39Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.6V @ 15V, 60A
- Voltage - Collector Emitter Breakdown (Max) :
- 1350 V
- Datasheets
- GT30N135SRA,S1E
Manufacturer related products
Catalog related products
related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| GT30-100-100-0.23-0 | t-Global Technology | 5,000 | THERM PAD 100MMX100MM PINK |
| GT30-300-300-0.23-0 | t-Global Technology | 5,000 | THERM PAD 300MMX300MM PINK |
| GT303J1K | Littelfuse Inc. | 5,000 | THERMISTOR NTC 30KOHM 3977K BEAD |
| GT30J121(Q) | Toshiba Semiconductor and Storage | 5,000 | IGBT 600V 30A 170W TO3PN |
| GT30J341,Q | Toshiba Semiconductor and Storage | 5,000 | IGBT TRANS 600V 30A TO3PN |
| GT30S-150-150-0.23-0 | t-Global Technology | 5,000 | THERM PAD 150MMX150MM PINK |
| GT30S-320-320-0.23-0 | t-Global Technology | 5,000 | THERM PAD 320MMX320MM PINK |
| GT30S-640-320-0.23-0 | t-Global Technology | 5,000 | THERM PAD 640MMX320MM PINK |
