PHT2NQ10T,135

Manufacturer :

NXP USA Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.5A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

5.1 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

160 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-65°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power Dissipation (Max) :

6.25W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

430mOhm @ 1.75A, 10V

Supplier Device Package :

SC-73

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA