EPC2016
- Manufacturer
- EPC
- Product Category
- Transistors - FETs, MOSFETs - Single
- Description
- GANFET N-CH 100V 11A DIE
- Manufacturer :
- EPC
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 11A (Ta)
- Drain to Source Voltage (Vdss) :
- 100 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 5V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 5.2 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 520 pF @ 50 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 125°C (TJ)
- Package / Case :
- Die
- Power Dissipation (Max) :
- -
- Product Status :
- Discontinued at Digi-Key
- Rds On (Max) @ Id, Vgs :
- 16mOhm @ 11A, 5V
- Supplier Device Package :
- Die
- Technology :
- GaNFET (Gallium Nitride)
- Vgs (Max) :
- +6V, -5V
- Vgs(th) (Max) @ Id :
- 2.5V @ 3mA
- Datasheet :
- EPC2016
Manufacturer related products
Catalog related products
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Part | Manufacturer | Stock | Description |
---|---|---|---|
EPC200-CSP5 | ESPROS Photonics AG | 724 | SENSOR PHOTODIODE 850NM |
EPC2001 | EPC | 5,000 | GANFET N-CH 100V 25A DIE OUTLINE |
EPC2001C | EPC | 101,659 | GANFET N-CH 100V 36A DIE OUTLINE |
EPC2007 | EPC | 5,000 | GANFET N-CH 100V 6A DIE OUTLINE |
EPC2007C | EPC | 59,521 | GANFET N-CH 100V 6A DIE OUTLINE |
EPC2010 | EPC | 5,000 | GANFET N-CH 200V 12A DIE |
EPC2010C | EPC | 11,544 | GANFET N-CH 200V 22A DIE OUTLINE |
EPC2012 | EPC | 5,000 | GANFET N-CH 200V 3A DIE |
EPC2012C | EPC | 20,072 | GANFET N-CH 200V 5A DIE OUTLINE |
EPC2014 | EPC | 5,000 | GANFET N-CH 40V 10A DIE OUTLINE |
EPC2014C | EPC | 114,088 | GANFET N-CH 40V 10A DIE OUTLINE |
EPC2015 | EPC | 5,000 | GANFET N-CH 40V 33A DIE OUTLINE |
EPC2015C | EPC | 22,146 | GANFET N-CH 40V 53A DIE |
EPC2016C | EPC | 141,350 | GANFET N-CH 100V 18A DIE |
EPC2018 | EPC | 5,000 | GANFET N-CH 150V 12A DIE |