TK11P65W,RQ
- Manufacturer
- Toshiba Semiconductor and Storage
- Product Category
- Transistors - FETs, MOSFETs - Single
- Description
- MOSFET N-CH 650V 11.1A DPAK
- Manufacturer :
- Toshiba Semiconductor and Storage
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 11.1A (Ta)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 890 pF @ 300 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation (Max) :
- 100W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 440mOhm @ 5.5A, 10V
- Supplier Device Package :
- DPAK
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 3.5V @ 450µA
- Datasheet :
- TK11P65W,RQ
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