FDMD8680
- Manufacturer
- onsemi
- Product Category
- Transistors - FETs, MOSFETs - Arrays
- Description
- MOSFET 2 N-CH 80V 66A 8-PQFN
- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 66A (Tc)
- Drain to Source Voltage (Vdss) :
- 80V
- FET Feature :
- Standard
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 73nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5330pF @ 40V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-PowerWDFN
- Power - Max :
- 39W
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 4.7mOhm @ 16A, 10V
- Supplier Device Package :
- 8-Power 5x6
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheet :
- FDMD8680
Manufacturer related products
Catalog related products
related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FDMD82100 | onsemi | 5,000 | MOSFET 2N-CH 100V 7A 12POWER |
| FDMD82100 | Rochester Electronics, LLC | 5,000 | SMALL SIGNAL FIELD-EFFECT TRANSI |
| FDMD82100L | onsemi | 5,000 | MOSFET 2N-CH 100V 7A 6-MLP |
| FDMD8240L | onsemi | 5,000 | MOSFET 2N-CH 40V 23A |
| FDMD8260L | onsemi | 5,000 | MOSFET 2N-CH 60V 15A 12POWER |
| FDMD8260L | Rochester Electronics, LLC | 5,000 | SMALL SIGNAL FIELD-EFFECT TRANSI |
| FDMD8260LET60 | onsemi | 5,000 | MOSFET 2N-CH 60V 15A 12POWER |
| FDMD8260LET60 | Rochester Electronics, LLC | 5,000 | POWER FIELD-EFFECT TRANSISTOR, N |
| FDMD8280 | onsemi | 5,000 | MOSFET 2N-CH 80V 11A 12POWER |
| FDMD8280 | Rochester Electronics, LLC | 5,000 | SMALL SIGNAL FIELD-EFFECT TRANSI |
| FDMD84100 | onsemi | 5,000 | MOSFET 2N-CH 100V 7A 8-PQFN |
| FDMD8430 | onsemi | 5,000 | FET ENGR DEV-NOT REL |
| FDMD8440L | Flip Electronics | 5,000 | FET ENGR DEV-NOT REL |
| FDMD85100 | onsemi | 5,000 | MOSFET 2N-CH 100V |
| FDMD8530 | onsemi | 5,000 | MOSFET 2N-CH 30V 35A |
