F415MR12W2M1B76BOMA1
- Manufacturer
- Infineon Technologies
- Product Category
- Transistors - FETs, MOSFETs - Arrays
- Description
- LOW POWER EASY AG-EASY2B-2
- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 75A (Tj)
- Drain to Source Voltage (Vdss) :
- 1200V (1.2kV)
- FET Feature :
- Silicon Carbide (SiC)
- FET Type :
- 4 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- 186nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5.52nF @ 800V
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Module
- Power - Max :
- -
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 15mOhm @ 75A, 15V
- Supplier Device Package :
- AG-EASY1B-2
- Vgs(th) (Max) @ Id :
- 5.55V @ 30mA
- Datasheets
- F415MR12W2M1B76BOMA1
Manufacturer related products
Catalog related products
related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
F4150R06KL4BOSA1 | Rochester Electronics, LLC | 5,000 | LOW POWER ECONO |
F4150R06KL4BOSA1 | Infineon Technologies | 5,000 | IGBT MOD 600V 180A 570W |
F4150R12KS4BOSA1 | Infineon Technologies | 10 | IGBT MOD 1200V 180A 960W |
F4150R12N3H3FB11BPSA1 | Infineon Technologies | 10 | LOW POWER ECONO AG-ECONO3B-411 |
F4150R17ME4B11BPSA1 | Infineon Technologies | 5,000 | IGBT MODULE 1700V 230A |
F4150R17ME4B11BPSA2 | Infineon Technologies | 5,000 | MEDIUM POWER ECONO AG-ECONOD-311 |
F4150R17N3P4B58BPSA1 | Infineon Technologies | 10 | LOW POWER ECONO AG-ECONO3B-411 |