RN2101MFV,L3F(CT
- Manufacturer
- Toshiba Semiconductor and Storage
- Product Category
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Description
- TRANS PREBIAS PNP 50V 0.1A VESM
- Manufacturer :
- Toshiba Semiconductor and Storage
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) :
- 100 mA
- Current - Collector Cutoff (Max) :
- 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA, 5V
- Frequency - Transition :
- 250 MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-723
- Power - Max :
- 150 mW
- Product Status :
- Active
- Resistor - Base (R1) :
- 4.7 kOhms
- Resistor - Emitter Base (R2) :
- 4.7 kOhms
- Supplier Device Package :
- VESM
- Transistor Type :
- PNP - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500µA, 5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Datasheet :
- RN2101MFV,L3F(CT
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