NHDTA123JTR
- Manufacturer
- Nexperia USA Inc.
- Product Category
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Description
- NHDTA123JT/SOT23/TO-236AB
- Manufacturer :
- Nexperia USA Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) :
- 100 mA
- Current - Collector Cutoff (Max) :
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA, 5V
- Frequency - Transition :
- 150 MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power - Max :
- 250 mW
- Product Status :
- Active
- Resistor - Base (R1) :
- 2.2 kOhms
- Resistor - Emitter Base (R2) :
- 47 kOhms
- Supplier Device Package :
- TO-236AB
- Transistor Type :
- PNP - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic :
- 100mV @ 500µA, 10mA
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Datasheets
- NHDTA123JTR
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