PDTC143EQB-QZ
- Manufacturer
- Nexperia USA Inc.
- Product Category
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Description
- PDTC143EQB-Q/SOT8015/DFN1110D-
- Manufacturer :
- Nexperia USA Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) :
- 100 mA
- Current - Collector Cutoff (Max) :
- 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA, 5V
- Frequency - Transition :
- 230 MHz
- Mounting Type :
- Surface Mount, Wettable Flank
- Package / Case :
- 3-XDFN Exposed Pad
- Power - Max :
- -
- Product Status :
- Active
- Resistor - Base (R1) :
- 4.7 kOhms
- Resistor - Emitter Base (R2) :
- 4.7 kOhms
- Supplier Device Package :
- DFN1110D-3
- Transistor Type :
- NPN - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 500µA, 10mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Datasheet :
- PDTC143EQB-QZ
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