2SA1162S-Y,LF

Manufacturer
Toshiba Semiconductor and Storage
Product Category
Transistors - Bipolar (BJT) - Single
Description
TRANS PNP 50V 0.15A SMINI
Manufacturer :
Toshiba Semiconductor and Storage
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector (Ic) (Max) :
150 mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 2mA, 6V
Frequency - Transition :
80MHz
Mounting Type :
Surface Mount
Operating Temperature :
125°C (TJ)
Package / Case :
TO-236-3, SC-59, SOT-23-3
Power - Max :
150 mW
Product Status :
Active
Supplier Device Package :
S-Mini
Transistor Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) :
50 V
Datasheet :
2SA1162S-Y,LF

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