EMF8T2R
- Manufacturer
- Rohm Semiconductor
- Product Category
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Description
- TRANS NPN PREBIAS/NPN 0.15W EMT6
- Manufacturer :
- Rohm Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Current - Collector (Ic) (Max) :
- 100mA, 500mA
- Current - Collector Cutoff (Max) :
- 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 68 @ 5mA, 5V / 270 @ 10mA, 2V
- Frequency - Transition :
- 250MHz, 320MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-563, SOT-666
- Power - Max :
- 150mW
- Product Status :
- Active
- Resistor - Base (R1) :
- 47kOhms
- Resistor - Emitter Base (R2) :
- 47kOhms
- Supplier Device Package :
- EMT6
- Transistor Type :
- 1 NPN Pre-Biased, 1 NPN
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V, 12V
- Datasheet :
- EMF8T2R
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