RN2962(TE85L,F)

Manufacturer
Toshiba Semiconductor and Storage
Product Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description
TRANS 2PNP PREBIAS 0.2W US6
Manufacturer :
Toshiba Semiconductor and Storage
Product Category :
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Current - Collector (Ic) (Max) :
100mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 10mA, 5V
Frequency - Transition :
200MHz
Mounting Type :
Surface Mount
Package / Case :
6-TSSOP, SC-88, SOT-363
Power - Max :
200mW
Product Status :
Active
Resistor - Base (R1) :
10kOhms
Resistor - Emitter Base (R2) :
10kOhms
Supplier Device Package :
US6
Transistor Type :
2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max) :
50V
Datasheet :
RN2962(TE85L,F)

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