SFT11GHA0G
- Manufacturer
- Taiwan Semiconductor Corporation
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 50V 1A TS-1
- Manufacturer :
- Taiwan Semiconductor Corporation
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 20pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 1A
- Current - Reverse Leakage @ Vr :
- 5 µA @ 50 V
- Diode Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- T-18, Axial
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- 35 ns
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Supplier Device Package :
- TS-1
- Voltage - DC Reverse (Vr) (Max) :
- 50 V
- Voltage - Forward (Vf) (Max) @ If :
- 950 mV @ 1 A
- Datasheet :
- SFT11GHA0G
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|---|---|---|---|
| SFT1101-TL-E | Rochester Electronics, LLC | 11,200 | BIP PNP 2.5A 120V |
| SFT11G | Taiwan Semiconductor Corporation | 5,000 | DIODE GEN PURP 50V 1A TS-1 |
| SFT11G A0G | Taiwan Semiconductor Corporation | 5,000 | DIODE GEN PURP 50V 1A TS-1 |
| SFT11G A1G | Taiwan Semiconductor Corporation | 5,000 | DIODE GEN PURP 50V 1A TS-1 |
| SFT11G R0G | Taiwan Semiconductor Corporation | 5,000 | DIODE GEN PURP 50V 1A TS-1 |
| SFT11GH | Taiwan Semiconductor Corporation | 5,000 | DIODE GEN PURP 50V 1A TS-1 |
| SFT11GHA1G | Taiwan Semiconductor Corporation | 5,000 | DIODE GEN PURP 50V 1A TS-1 |
| SFT11GHR0G | Taiwan Semiconductor Corporation | 5,000 | DIODE GEN PURP 50V 1A TS-1 |
| SFT1201-TL-E | Rochester Electronics, LLC | 5,000 | NPN SILICON TRANSISTOR |
| SFT1202-E | onsemi | 918 | TRANS NPN 150V 2A TP |
| SFT1202-TL-E | onsemi | 800 | TRANS NPN 150V 2A TPFA |
| SFT12G | Taiwan Semiconductor Corporation | 5,000 | DIODE GEN PURP 100V 1A TS-1 |
| SFT12G A0G | Taiwan Semiconductor Corporation | 5,000 | DIODE GEN PURP 100V 1A TS-1 |
| SFT12G A1G | Taiwan Semiconductor Corporation | 5,000 | DIODE GEN PURP 100V 1A TS-1 |
| SFT12G R0G | Taiwan Semiconductor Corporation | 5,000 | DIODE GEN PURP 100V 1A TS-1 |
