1N5811USE3

Manufacturer
Microchip Technology
Product Category
Diodes - Rectifiers - Single
Description
RECTIFIER DIODE
Manufacturer :
Microchip Technology
Product Category :
Diodes - Rectifiers - Single
Capacitance @ Vr, F :
-
Current - Average Rectified (Io) :
3A
Current - Reverse Leakage @ Vr :
-
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-65°C ~ 175°C
Package / Case :
SQ-MELF, B
Product Status :
Active
Reverse Recovery Time (trr) :
30 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
B, SQ-MELF
Voltage - DC Reverse (Vr) (Max) :
150 V
Voltage - Forward (Vf) (Max) @ If :
875 mV @ 4 A
Datasheets
1N5811USE3

Manufacturer related products

Catalog related products

  • NextGen Components
    DIODE GEN PURP 400V 2A SMA
  • NextGen Components
    DIODE GEN PURP 600V 3A SMB
  • NextGen Components
    DIODE GEN PURP 200V 3A SMB
  • NextGen Components
    DIODE GEN PURP 400V 1A SMA
  • NextGen Components
    DIODE GEN PURP 400V 3A SMB

related products

Part Manufacturer Stock Description
1N5802 Microchip Technology 706 DIODE GEN PURP 50V 1A AXIAL
1N5802 Semtech Corporation 5,000 DIODE GEN PURP 50V 3.3A AXIAL
1N5802 Solid State Inc. 5,000 DO-204AP 2.5 AMP RECTIFIER
1N5802/TR Microchip Technology 5,000 RECTIFIER UFR,FRR
1N5802URS Microchip Technology 5,000 UFR,FRR
1N5802US Microchip Technology 53 DIODE GEN PURP 50V 1A D5A
1N5802US Semtech Corporation 5,000 DIODE GEN PURP 50V 1.1A
1N5802US/TR Microchip Technology 5,000 RECTIFIER UFR,FRR
1N5803 Solid State Inc. 5,000 DO-204AP 2.5 AMP RECTIFIER
1N5803 Microchip Technology 5,000 DIODE GEN PURP 75V 1A AXIAL
1N5803/TR Microchip Technology 5,000 RECTIFIER UFR,FRR
1N5803E3 Microchip Technology 5,000 UFR,FRR
1N5803US Microchip Technology 5,000 UFR,FRR
1N5803US/TR Microchip Technology 5,000 UFR,FRR
1N5804 Microchip Technology 480 DIODE GEN PURP 100V 1A AXIAL