EGF1T-E3/5CA
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 1.3KV 1A DO214BA
- Manufacturer :
- Vishay General Semiconductor - Diodes Division
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- 1A
- Current - Reverse Leakage @ Vr :
- 5 µA @ 1300 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-214BA
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- 75 ns
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Supplier Device Package :
- DO-214BA (GF1)
- Voltage - DC Reverse (Vr) (Max) :
- 1300 V
- Voltage - Forward (Vf) (Max) @ If :
- 3 V @ 1 A
- Datasheet :
- EGF1T-E3/5CA
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| EGF1A | Rochester Electronics, LLC | 6,017 | RECTIFIER DIODE, 1A, 50V, DO-214 |
| EGF1A | onsemi | 5,000 | DIODE GEN PURP 50V 1A SMA |
| EGF1A-E3/5CA | Vishay General Semiconductor - Diodes Division | 5,000 | DIODE GEN PURP 50V 1A DO214BA |
| EGF1A-E3/67A | Vishay General Semiconductor - Diodes Division | 5,000 | DIODE GEN PURP 50V 1A DO214BA |
| EGF1AHE3/5CA | Vishay General Semiconductor - Diodes Division | 5,000 | DIODE GEN PURP 50V 1A DO214BA |
| EGF1AHE3/67A | Vishay General Semiconductor - Diodes Division | 5,000 | DIODE GEN PURP 50V 1A DO214BA |
| EGF1AHE3_A/H | Vishay General Semiconductor - Diodes Division | 5,000 | DIODE GEN PURP 50V 1A DO214BA |
| EGF1AHE3_A/I | Vishay General Semiconductor - Diodes Division | 5,000 | DIODE GEN PURP 50V 1A DO214BA |
| EGF1B | onsemi | 41,295 | DIODE GEN PURP 100V 1A SMA |
| EGF1B-1HE3/5CA | Vishay General Semiconductor - Diodes Division | 5,000 | DIODE GEN PURP 100V 1A DO214BA |
| EGF1B-1HE3/67A | Vishay General Semiconductor - Diodes Division | 5,000 | DIODE GEN PURP 100V 1A DO214BA |
| EGF1B-1HE3_A/H | Vishay General Semiconductor - Diodes Division | 5,000 | DIODE GEN PURP 100V 1A DO214BA |
| EGF1B-1HE3_A/I | Vishay General Semiconductor - Diodes Division | 5,000 | DIODE GEN PURP 100V 1A DO214BA |
| EGF1B-1HE3_B/H | Vishay General Semiconductor - Diodes Division | 5,000 | DIODE GEN PURP 100V 1A DO214BA |
| EGF1B-1HE3_B/I | Vishay General Semiconductor - Diodes Division | 5,000 | DIODE GEN PURP 100V 1A DO214BA |
