1N1203B
- Manufacturer
- Solid State Inc.
- Product Category
- Diodes - Rectifiers - Single
- Description
- DO4 12 AMP SILICON RECTIFIER
- Manufacturer :
- Solid State Inc.
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- 12A
- Current - Reverse Leakage @ Vr :
- 10 µA @ 300 V
- Diode Type :
- Standard
- Mounting Type :
- Stud Mount
- Operating Temperature - Junction :
- -65°C ~ 200°C
- Package / Case :
- DO-203AA, DO-4, Stud
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Speed :
- Standard Recovery >500ns, > 200mA (Io)
- Supplier Device Package :
- DO-4
- Voltage - DC Reverse (Vr) (Max) :
- 300 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.2 V @ 30 A
- Datasheet :
- 1N1203B
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| 1N1200 | Microchip Technology | 5,000 | STANDARD RECTIFIER |
| 1N1200 | Solid State Inc. | 5,000 | DO4 12 AMP SILICON RECTIFIER |
| 1N1200A | GeneSiC Semiconductor | 266 | DIODE GEN PURP 100V 12A DO4 |
| 1N1200A | Microchip Technology | 5,000 | STANDARD RECTIFIER |
| 1N1200A | Solid State Inc. | 5,000 | DO4 12 AMP SILICON RECTIFIER |
| 1N1200AR | GeneSiC Semiconductor | 5,000 | DIODE GEN PURP REV 100V 12A DO4 |
| 1N1200AR | Microchip Technology | 5,000 | STANDARD RECTIFIER |
| 1N1200B | Microchip Technology | 5,000 | STANDARD RECTIFIER |
| 1N1200B | Solid State Inc. | 5,000 | DO4 12 AMP SILICON RECTIFIER |
| 1N1200BR | Microchip Technology | 5,000 | STANDARD RECTIFIER |
| 1N1200C | Microchip Technology | 5,000 | STANDARD RECTIFIER |
| 1N1200R | Microchip Technology | 5,000 | STANDARD RECTIFIER |
| 1N1200R | Solid State Inc. | 5,000 | DO4 12 AMP SILICON RECTIFIER |
| 1N1200RA | Solid State Inc. | 5,000 | DO4 12 AMP SILICON RECTIFIER |
| 1N1200RB | Solid State Inc. | 5,000 | DO4 12 AMP SILICON RECTIFIER |
