Transistors - FETs, MOSFETs - Single - I GYRE ELECTRONICS

Power Dissipation (Max)：

Drain to Source Voltage (Vdss)：

Current - Continuous Drain (Id) @ 25°C：

Rds On (Max) @ Id, Vgs：

Vgs(th) (Max) @ Id：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

Vgs (Max)：

Filter：

2 Records

Image	Part	Manufacturer	Description	Price	MOQ		Stock	Action
	GT100N12M	Goford Semiconductor	N120V,RD(MAX)<10M@10V...	$1.5100	1	PDF RFQ	5,000 In-stock	Buy Now Get Quote
	GC11N65M	Goford Semiconductor	N650V,RD(MAX)<360M@10V...	$1.7400	1	PDF RFQ	5,000 In-stock	Buy Now Get Quote

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