Transistors - FETs, MOSFETs - Single - I GYRE ELECTRONICS

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Power Dissipation (Max)：

Drain to Source Voltage (Vdss)：

Current - Continuous Drain (Id) @ 25°C：

Vgs(th) (Max) @ Id：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

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3 Records

Image	Part	Manufacturer	Description	Price	MOQ		Stock	Action
	RM8N650IP	Rectron USA	MOSFET N-CHANNEL...	$0.5200	4,000	PDF RFQ	5,000 In-stock	Buy Now Get Quote
	RM8N650LD	Rectron USA	MOSFET N-CHANNEL...	$0.5200	25,000	PDF RFQ	5,000 In-stock	Buy Now Get Quote
	TK8A60W5,S5VX	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 8A...	$1.8400	1	PDF RFQ	5,000 In-stock	Buy Now Get Quote

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