Transistors - FETs, MOSFETs - Single - I GYRE ELECTRONICS

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Power Dissipation (Max)：

Drain to Source Voltage (Vdss)：

Current - Continuous Drain (Id) @ 25°C：

Rds On (Max) @ Id, Vgs：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

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Image	Part	Manufacturer	Description	Price	MOQ		Stock	Action
	FQU2N50BTU	onsemi	MOSFET N-CH 500V 1.6...	-	1	PDF RFQ	5,000 In-stock	Get Quote
	STD1NK60-1	STMicroelectronics	MOSFET N-CH 600V 1A...	$1.1600	1	PDF RFQ	3,000 In-stock	Buy Now Get Quote
	FQU2N50BTU	Rochester Electronics, LLC	MOSFET N-CH 500V 1.6...	$0.3700	802	PDF RFQ	60,263 In-stock	Buy Now Get Quote

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